Method for doping an active hall effect region of a hall effect device

US9978930B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Eckinger · Regenstauf, DE
• Stefan Kolb · Unterschleißheim, DE

Key dates

• Filing date: Jul 18, 2017
• Grant date: May 22, 2018
• Expiry date: Jul 18, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/101
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.