Resistive RAM structure and method of fabrication thereof
US9978938B2 · kind B2 · utility
8Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 13, 2015 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Jan 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
A metal-insulator-metal (MIM) capacitor structure of an RRAM device includes a first electrode and a second electrode with an insulating layer interposing the first and second electrodes. The conductive filament providing for a switching function of the RRAM device may be formed within the insulating layer. Further, a nitrogen-rich metal layer interposes the second electrode and the insulating layer. The nitrogen-rich metal layer includes a greater nitrogen concentration than that of the adjacent second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.