Power semiconductor device
US9979105B2 · kind B2 · utility
1Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | May 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.