Method for inspecting a pattern of features on a semiconductor die
US9983154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/646
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure is related to a method for detection of defects in a printed pattern of geometrical features on a semiconductor die, the pattern comprising an array of features having a nominal pitch, the method comprising determining deviations from the nominal pitch in the printed pattern, and comparing the printed pattern with another version of the pattern, the other version having the same or similar pitch deviations as the printed pattern. According to various embodiments, the other version of the pattern may a printed pattern on a second die, or it may be a reference pattern, obtained by shifting features of the array in a version having no or minimal pitch deviations, so that the pitch deviations in the reference pattern are the same or similar to the pitch deviations in the printed pattern under inspection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.