Patent · US Active

Method of producing transition metal dichalcogenide layer

US9984874B2 · kind B2 · utility

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19Claims

0Family size

Assignees

IMEC VZW · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Matty Caymax · Leuven, BE
Markus Heyne · Leuven, BE
Annelies Delabie · Leuven, BE

Key dates

Filing date	Dec 18, 2014
Grant date	May 29, 2018
Priority date	—
Expiry date	Dec 18, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02664
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.