Light detection device with integrated photodiode and thin film transistor
US9985061B2 · kind B2 · utility
1Cited by
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13Claims
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Key dates
| Filing date | Mar 19, 2015 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Mar 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.