Solid-state imaging device
US9985065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2015 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/07
Abstract
A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.