Image sensor with reduced spectral and optical crosstalk and method for making the image sensor
US9985119B2 · kind B2 · utility
1Cited by
12References
22Claims
0Family size
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Key dates
| Filing date | Apr 17, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Apr 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/992
Abstract
An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.