High-voltage metal-oxide-semiconductor transistor and fabrication method thereof
US9985129B2 · kind B2 · utility
5Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Nov 22, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Nov 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage MOS transistor includes a semiconductor substrate, a gate oxide layer on the semiconductor substrate, a gate on the gate oxide layer, a spacer covering a sidewall of the gate, a source on one side of the gate, and a drain on the other side of the gate. The gate includes at least a first discrete segment and a second discrete segment. The first discrete segment is not in direct contact with the second discrete segment. The spacer fills into a gap between the first discrete segment and the second discrete segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.