Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
US9985168B1 · kind B1 · utility
6Cited by
34References
14Claims
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Key dates
| Filing date | Nov 18, 2014 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layers, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.