Cointegration of optical waveguides, microfluidics, and electronics on sapphire substrates
US9989467B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Feb 14, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Feb 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.