Patent · US Active

Cointegration of optical waveguides, microfluidics, and electronics on sapphire substrates

US9989467B2 · kind B2 · utility

0Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 14, 2017
Grant dateJun 5, 2018
Priority date
Expiry dateFeb 15, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/10
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.