Semiconductor device and liquid crystal display device
US9989828B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.