Photolithographic patterning of electronic devices

US9991114B2 · kind B2 · utility

Assignee

• Orthogonal, Inc. · US

Inventors

• Douglas R. Robello · Webster, US
• Terrence R. O'Toole · Webster, US
• Frank Xavier Byrne · Webster, US
• Diane C. Freeman · Pittsford, US
• Charles Warren Wright · Fairport, US
• Sandra Rubsam · Webster, US
• Kenneth Boblak · Oakland, US
• Meng Zhao · Beijing, CN

Key dates

• Filing date: Jun 23, 2017
• Grant date: Jun 5, 2018
• Expiry date: Jun 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/166
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of patterning a device includes forming a fluorinated photopolymer layer over a device substrate. The photopolymer layer has a lower portion proximate the device substrate and an upper portion distal the device substrate. The fluorinated photopolymer layer includes a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group. The photopolymer layer is exposed to patterned radiation to form exposed and unexposed areas in accordance with the patterned radiation and a developed structure is formed by removing unexposed areas using a developing agent that includes a first fluorinated solvent. The lower portion of the exposed area of the photopolymer layer has a dissolution rate in the developing agent that is at least 5 times higher than a dissolution rate for the upper portion.