Semiconductor device and formation thereof
US9991169B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Sep 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and methods of formation are provided. The semiconductor device includes a first active region having a first active region height and an active channel region having an active channel region height over a fin. The first active region height is greater than the active channel region height. The active channel region having the active channel region height has increased strain, such as increased tensile strain, as compared to an active channel region that has a height greater than the active channel region height. The increased strain increases or enhances at least one of hole mobility or electron mobility in at least one of the first active region or the active channel region. The active channel region having the active channel region height has decreased source drain leakage, as compared to an active channel region that has a height greater than the active channel region height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.