Bidirectional semiconductor device for protection against electrostatic discharges
US9991173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jan 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
An integrated circuit is produced on a bulk semiconductor substrate in a given CMOS technology and includes a semiconductor device for protection against electrostatic discharges. The semiconductor device has a doublet of floating-gate, thyristors coupled in parallel and head-to-tail. Each thyristor has a pair of electrode regions. The two thyristors respectively have two separate gates and a common semiconductor gate region. The product of the current gains of the two transistors of each thyristor is greater than 1. Each electrode region of at least one of the thyristors has a dimension, measured perpendicularly to the spacing direction of the two electrodes of the corresponding pair, which is adjusted so as to impart to the thyristor an intrinsic triggering voltage less than the breakdown voltage of a transistor to be protected, and produced in the CMOS technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.