Antenna cavity structure for integrated patch antenna in integrated fan-out packaging
US9991216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jun 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an integrated fan-out package includes depositing an adhesive layer on a carrier, forming a back-side buffer layer over the adhesive layer, forming a back-side redistribution metal layer on the back-side buffer layer, wherein the back-side redistribution metal layer includes one or more ground plane structures, forming one or more through-insulator vias (TIVs) and one or more cavity sidewalls on the one or more ground plane structures, placing a radio frequency (RF) integrated circuit (IC) die on the back-side buffer layer, laterally encapsulating the RF IC die, the one or more TIVs, the one or more cavity sidewalls, with a molding compound, thus forming an interim substrate, wherein the cavity sidewalls and their associated ground plane structure define one or more antenna cavities, and forming a top-side redistribution (RDL) wiring structure on the interim substrate, the top-side RDL wiring structure including one or more integrated patch antenna structure, wherein the one or more integrated patch antenna structure is coupled to the RF IC die and each of the one or more integrated patch antenna structure is positioned over one of the antenna cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.