Stacked image sensor pixel cell with a charge amplifier and selectable shutter modes and in-pixel CDS
US9991298B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel cell has a photodiode, a transfer transistor, a reset transistor, an amplifier transistor in a common source configuration and a readout circuit block. The photodiode, transfer transistor, reset transistor and common source amplifier are disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit block may be partially disposed within a second substrate of a second semiconductor chip and partially disposed within the first substrate wherein the readout circuit block comprises optionally selectable rolling shutter and global shutter readout modes through the use of computer programmable digital register settings. The global shutter readout mode provides in-pixel correlated double sampling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.