Image sensor device structure
US9991303B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Mar 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.