Patent · US Active

Method and structure for dual sheet resistance trimmable thin film resistors at same level

US9991329B2 · kind B2 · utility

0Cited by

0References

12Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Christoph Dirnecker · Unterschleißheim, DE
Wolfgang Schwartz · Hamburg, DE
Doug Weiser · Plano, US
Joel M. Halbert · Tucson, US
Joseph Anthony DeSantis · Gilroy, US
Karsten Jens Spinger · Ingolstadt, DE

Key dates

Filing date	Jul 13, 2016
Grant date	Jun 5, 2018
Priority date	—
Expiry date	Jul 20, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/5228
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.