Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation
US9991360B2 · kind B2 · utility
1Cited by
19References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 28, 2010 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jun 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.