Low loss and low cross talk transmission lines using shaped vias

US9992859B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Adel A. Elsherbini · Chandler, US
• Mathew J. Manusharow · Phoenix, US
• Krishna Bharath · Phoenix, US
• Zhichao Zhang · Chandler, US
• Yidnekachew S. Mekonnen · Chandler, US
• Aleksandar Aleksov · Chandler, US
• Henning Braunisch · Chandler, US
• Feras Eid · Chandler, US
• Javier Soto · València, ES

Key dates

• Filing date: Sep 25, 2015
• Grant date: Jun 5, 2018
• Expiry date: Nov 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K1/0245
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.