Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AIN

US9994950B2 · kind B2 · utility

Assignees

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE
• TU Dresden · DE

Inventors

• Hagen Bartzsch · Dresden, DE
• Daniel Glöß · Dresden, DE
• Peter Frach · Radeberg, DE
• Stephan Barth · Gröbenzell, DE

Key dates

• Filing date: Jun 24, 2014
• Grant date: Jun 12, 2018
• Expiry date: Feb 3, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/853
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1≤X≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).