Patent · US Active

Semiconductor device with optical and electrical vias

US9995894B2 · kind B2 · utility

0Cited by

5References

8Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Karl Rohracher · Graz, AT
Jordi Teva · Eindhoven, NL

Key dates

Filing date	Oct 8, 2014
Grant date	Jun 12, 2018
Priority date	—
Expiry date	Nov 14, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/10174
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.