System and method for modular simulation of spin transfer torque magnetic random access memory devices
US9997225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | May 1, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method for simulating behavior of a spin transfer torque magnetic random access memory (STT-MRAM) device includes a hardware processor (HP) and logic instructions (LI) stored in memory. The LI are executed by the HP to configure a library of functional blocks (FBs) to capture physical phenomenon of at least one element of the STT-MRAM configured in the form of a magnetic stack. Selected elements of the stack are mapped into a set of selected FBs (SFBs). The mapping converts the stack to a spin device circuit (SDC) represented by the SFBs. The SFBs are assembled to form the SDC replicating the stack. The SDC includes an electron spin transport, a magnet-dynamics, a magnetic coupling and a coupled electron transport+magnet-dynamics FBs. A set of output parameters simulating the STT-MRAM is generated by the SFBs in response to receiving a set of input parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.