Silicon composite substrates
US9997353B1 · kind B1 · utility
20Cited by
3References
11Claims
0Family size
Inventors
Key dates
| Filing date | Apr 26, 2017 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A composite substrate includes a single crystal silicon layer on a glass or glass ceramic layer on a support layer can be used to form GaN layer without cracks. The glass or glass ceramic layer can have a set point and/or strain point below the deposition temperature of GaN, which can assist in releasing stress in the deposited GaN layer. Additionally, the composite substrate can be exposed to a heated and dry hydrogen ambient to reduce an oxide layer between the silicon layer and the glass or glass ceramic layer, to allow the formation of free standing GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.