Method for manufacturing germamde interconnect structures and corresponding interconnect structures

US9997458B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Laure Elisa Carbonell · Leuven, BE
• Antony Premkumar Peter · Heverlee, BE
• Marc Schaekers · Leuven, BE
• Sven Van Elshocht · Heverlee, BE
• Zsolt Tokei · Leuven, BE

Key dates

• Filing date: May 14, 2013
• Grant date: Jun 12, 2018
• Expiry date: May 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.