Image sensor
US9997556B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 7, 2017 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Apr 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
An image sensor includes: a pixel array including a plurality of unit pixels that are arrayed in two dimensions, wherein each of the plurality of the unit pixels includes: a substrate that including a photoelectric conversion element; a recess pattern formed in the substrate to overlap with the photoelectric conversion element and correspond to a center of the photoelectric conversion element; a first gate suitable for filling at least the recess pattern; a second gate formed over the substrate to overlap with the photoelectric conversion element and to be adjacent to the first gate in a first diagonal direction; and a third gate formed over the substrate to overlap with the photoelectric conversion element and to be adjacent to the first gate in a second diagonal direction which intersects with the first diagonal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.