Semiconductor devices, FinFET devices and methods of forming the same
US9997633B2 · kind B2 · utility
8Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2016 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Mar 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate over the substrate. Besides, the gate include a first portion, a second portion overlying the first portion and a third portion overlying the second portion, and the critical dimension of the second portion is smaller than each of the critical dimension of the first portion and the critical dimension of the third portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.