Semiconductor device having magnetic tunnel junction structure and method of fabricating the same
US9997699B2 · kind B2 · utility
5Cited by
142References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2016 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | May 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.