Rectifying devices and fabrication methods
US9997837B1 · kind B1 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2017 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Apr 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02J50/27
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A method of forming an electronic field emission rectifier involves depositing a first metal layer, a dielectric, and a second metal layer on a substrate in that order. The dielectric layer and the second metal layer are patterned. Patterning the dielectric and second metal layers involves depositing a nanostructuring layer on the second metal layer. The nanostructuring layer self-assembles into removable regions embedded within a matrix. When the removable regions are removed, a pattern is formed in the matrix.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.