SOI CMOS device having body extension for providing sidewall channel

USH1435H · kind H · statutory invention registration

Inventors

• Richard D. Cherne · Melbourne, AU
• Jack E. Clark, II · Palm Bay, US
• Glenn A. Dejong · Merritt Island, US
• Richard L. Lichtel, Jr. · Palm Bay, US
• Wesley H. Morris · Austin, US
• William H. Speece · Palm Bay, US

Key dates

• Grant date: May 2, 1995

Classification

• Technology area (CPC —): General

Abstract

An SOI/SOS thin film MOS mesa architecture has its body/channel region extended beyond the source and drain regions and the impurity concentration is increased at a selected portion (e.g. an end portion) of the extended body region, so as to provide both a body tie access location which enables the body/channel region to be terminated to a prescribed bias voltage (e.g. Vss), and a channel stop region that is effective to functionally interrupt a current leakage path or `parasitic` N-channel that may be induced along sidewall surface of the P-type material of the body/channel region. In another embodiment, ionizing radiation-induced inversion of the sidewalls of the P-type body/channel region is prevented by an asymmetric sidewall channel stop structure formed in opposite end portions of the source region.