Field-effect transistor
USH368H · kind H · statutory invention registration
2Cited by
0References
5Claims
0Family size
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Inventor
Key dates
| Filing date | — |
| Grant date | Nov 10, 1987 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
A method of improving field-effect transistors, and the product thereof, wherein the resistivity of the upper layer of the source-gate channel region of a GaAs field-effect transistor (FET) may be selectively raised is disclosed. Impurity ions are implanted in the source-gate channel region followed by a much shallower implantation of boron in the same region. The boron ion concentration should exceed the N+ impurity ion concentration by a factor of 2 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.