Resistive field shields for high voltage devices
USH665H · kind H · statutory invention registration
10Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | — |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.