Thermally self-protected power switching semiconductor device
USRE30514E · kind E · reissue
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1979 |
| Grant date | Feb 10, 1981 |
| Priority date | — |
| Expiry date | Mar 19, 1999 |
Classification
- Technology area (CPC —)General
Abstract
A semiconductor device is disclosed comprising a temperature sensitive thyristor thermally coupled to a power switching thyristor and electrically connected in parallel with the gate of the latter. The temperature sensitive thyristor senses the temperature of the power switching thyristor and automatically responds thereto above a predetermined temperature by shunting the gate current to prevent overheating of the power switching thyristor. The device may additionally include a second temperature sensitive thyristor having a lower switching temperature than the first mentioned thyristor and connected in series with the gate of the power switching thyristor whereby the latter may be triggered into conduction only within a defined temperature range bounded by the switching temperatures of the temperature sensitive thyristors. Normally off and normally on devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.