System for fabrication of semiconductor bodies
USRE31473E · kind E · reissue
11Cited by
10References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 2, 1982 |
| Grant date | Dec 27, 1983 |
| Priority date | — |
| Expiry date | Mar 2, 2002 |
Classification
- Technology area (CPC —)General
Abstract
A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.