Complementary semiconductor device
USRE34158E · kind E · reissue
10Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Aug 13, 2011 |
Classification
- Technology area (CPC —)General
Abstract
A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the wall from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.