Multibit single cell memory element having tapered contact

USRE37259E · kind E · reissue

Assignee

• Energy Conversion Devices, Inc. · US

Inventor

• Stanford R. Ovshinsky · Bloomfield Hills, US

Key dates

• Filing date: Nov 8, 1999
• Grant date: Jul 3, 2001
• Expiry date: Nov 8, 2019

Classification

• Technology area (CPC —): General

Abstract

An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.