Susceptor for vapor-phase growth apparatus
USRE38937E1 · kind E1 · reissue
Assignee
Inventor
Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Sep 4, 2022 |
Classification
- Technology area (CPC —)General
Abstract
It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket 6, a down flow of a reacting source gas from the upper surface of the susceptor 5 is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer 9 can be controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.