Masks for use in optical lithography below 180 nm
USRE39349E1 · kind E1 · reissue
0Cited by
8References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Nov 4, 2023 |
Classification
- Technology area (CPC —)General
Abstract
A mask for use on a layer of imaging material which is located on at least a portion of one surface of a substrate in a lithography process in accordance with one embodiment of the present invention includes a layer of a masking material which has an optical density of at least 4.0 for wavelengths at or below about 180 nm and a thickness of less than about 1000 angstroms. Materials, such as tungsten and amorphous silicon, can be used for the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.