Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
USRE40507E1 · kind E1 · reissue
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Key dates
| Filing date | Jun 25, 2003 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Jun 25, 2023 |
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- Technology area (CPC —)General
Abstract
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume ratio. Then, a low-ozone doped BPSG film is deposited over the high-ozone undoped silicon dioxide layer. The film layers are heat treated to densify the film, and then the top layer is planarized using known planarization techniques to a thickness that allows for adequate mobile-ion gettering.
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