Semiconductor memory device
USRE41879E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jun 3, 2028 |
Classification
- Technology area (CPC —)General
Abstract
Provided is a semiconductor memory device compatible with a SRAM and capable of a high-speed data transfer operation while maintaining data reliability. An access to a memory core 6 starts when an external chip enable signal XCE performs a falling transition. Simultaneously, an external write enable signal XWE and an external address signal ADD are received, and a memory cell 1, in the memory core 6, corresponding to the received external address signal ADD is selected. When a data read-out from the memory cell 1 or a data write-in to the memory cell 1 is complete, a rewrite timer 7 is activated in accordance with a rising transition of an external chip enable signal XCE or a rising transition of the external write enable signal XWE for performing a data rewrite for the memory cell 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.