Electrostatic chucking stage and substrate processing apparatus
USRE42175E1 · kind E1 · reissue
Assignees
Inventors
Key dates
| Filing date | May 21, 2009 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | May 21, 2029 |
Classification
- Technology area (CPC —)General
Abstract
This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.