Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

USRE42423E1 · kind E1 · reissue

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Martin Kordesch · The Plains, US
• Howard D. Bartlow · Sunnyvale, US
• Richard L. Woodin · Yarmouth, US

Key dates

• Filing date: Nov 7, 2008
• Grant date: Jun 7, 2011
• Expiry date: Nov 7, 2028

Classification

• Technology area (CPC —): General

Abstract

Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.