Extreme low-K dielectric film scheme for advanced interconnects

USRE42514E1 · kind E1 · reissue

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Fang Wen Tsai · Hsinchu, TW
• Kuan-Chen Wang · Hsinchu, TW
• Keng-Chu Lin · Chunri, TW
• Chih-Lung Lin · Redmond, US
• Shwang-Ming Jeng · Hsinchu, TW

Key dates

• Filing date: Nov 10, 2010
• Grant date: Jul 5, 2011
• Expiry date: Nov 10, 2030

Classification

• Technology area (CPC —): General

Abstract

An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.