Methods of atomic layer deposition using titanium-based precursors
USRE45124E1 · kind E1 · reissue
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| Filing date | Mar 15, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
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- Technology area (CPC —)General
Abstract
Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I:wherein:
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