Method of forming a contact plug for a semiconductor device
USRE45232E1 · kind E1 · reissue
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29References
23Claims
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Key dates
| Filing date | Aug 7, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Aug 7, 2032 |
Classification
- Technology area (CPC —)General
Abstract
A method of manufacturing a semiconductor device having the steps of forming an insulating layer on a silicon substrate, forming a contact hole on the insulating layer, forming a selective silicon layer in the contact hole, and forming a selective conductive plug on the selective silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.