Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
USRE46887E1 · kind E1 · reissue
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Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC —)General
Abstract
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.
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