Polycrystalline group III metal nitride with getter and method of making
USRE47114E1 · kind E1 · reissue
7Cited by
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33Claims
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Key dates
| Filing date | Mar 24, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC —)General
Abstract
A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.