Group III-nitride layers with patterned surfaces
USRE47767E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2015 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Dec 23, 2035 |
Classification
- Technology area (CPC —)General
Abstract
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.