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USRE48879E1 · kind E1 · reissue

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72References
18Claims
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Key dates

Filing dateJun 20, 2019
Grant dateJan 4, 2022
Priority date
Expiry dateJun 20, 2039

Classification

  • Technology area (CPC —)General

Abstract

Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.